现行

GB/T 14139-2019

硅外延片
Silicon epitaxial wafers

2019-06-04

现行

T/ZZB 2833-2022

高压MOSFET用200 mm硅外延片
200 mm silicon epitaxial wafers for high voltage MOSFET

2022-12-08

现行

GB/T 43885-2024

碳化硅外延片
Silicon carbide epitaxial wafers

2024-04-25

现行

GB/T 35310-2017

200mm硅外延片
200mm silicon epitaxial wafer

2017-12-29

现行

GB/T 14015-1992

硅-蓝宝石外延片
Silicon on sapphire epitaxial wafers

1992-12-28

现行

GB/T 44334-2024

埋层硅外延片
Silicon epitaxial wafers with buried layers

2024-08-23

现行

T/NXCL 45-2026

300 mm 轻掺硼直拉硅单晶抛光片
300 mm lightly boron-doped monocrystalline Czochralski silicon polished wafers

2026-06-12

现行

T/NXCL 29-2024

300 mm低氧含量直拉硅单晶抛光片
300 mm low oxygen content single crystaline Czochralski silicon polished wafers

2024-02-06

现行

T/NXCL 017-2022

300 mm重掺磷直拉硅单晶抛光片
300 mm heavily phosphorus-doped single crystaline Czochralski silicon polished wafers

2022-12-02

现行

GB/T 42902-2023

碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method

2023-08-06

现行

DL/T 2310-2021

电力系统高压功率器件用碳化硅外延片使用条件
Acceptance specification for silicon carbide epitaxial wafer of high voltage power devices in the grid system

2021-04-26

现行

T/NXCL 44-2026

300 mm轻掺硼直拉硅单晶
300 mm lightly boron-doped monocrystalline Czochralski silicon

2026-06-12

现行

T/NXCL 30-2024

300 mm低氧含量直拉硅单晶
300 mm low oxygen content single crystaline Czochralski silicon

2024-02-06

现行

T/ZZB 0648-2018

200 mm重掺磷直拉硅单晶抛光片
200 mm heavily phosphorus-doped single crystalline Czochralski silicon polished wafers

2018-10-19

现行

T/NXCL 016-2022

200 mm重掺锑直拉硅单晶抛光片
200 mm heavily antimony-doped single crystaline Czochralski silicon polished wafer

2022-12-02